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Patent Name
Application Number Application Date Issue Number Issue Date Abstract (HTML) Patent (PDF)
Transistor on the basis of new quantum interference effect 12/075,943 13-Mar-08 7,893,422 22-Feb-11 X X
Process for making electrode pairs 11/254,495 20-Oct-05 7,658,772 09-Feb-10 X X
Method for fabrication of separators for electrode pairs in diodes 11/293,411 02-Dec-05 7,642,467 05-Jan-10 X X
Thermal tunneling gap diode with integrated spacers and vacuum seal 11/376,520 14-Mar-06 7,589,348 15-Sep-09 X X
Quantum interference device 11/901,549 18-Sep-07 7,566,897 28-Jul-09 X X
Diode device utilizing bellows 11/657,938 24-Jan-07 7,427,786 23-Sep-08 X X
Method of increasing efficiency of thermotunnel devices 11/289,206 28-Nov-05 7,351,996 01-Apr-08 X X
Method for increasing efficiency of thermotunnel devices 10/534,633 27-Nov-03 7,323,709 29-Jan-08 X X
Thermionic vacuum diode device with adjustable electrodes 11/598,919 13-Nov-06 7,253,549 07-Aug-07 X X
Influence of surface geometry on metal properties 11/484,822 10-Jul-06 7,220,984 22-May-07 X X
Fabrication of close-spaced MEMS devices by method of precise adhesion regulation 11/058,308 14-Feb-05 7,208,021 24-Apr-07 X X
Thermionic vacuum diode device with adjustable electrodes 10/507,273 06-Mar-03 7,169,006 30-Jan-07 X X
Artificial band gap 10/760,697 19-Jan-04 7,166,786 23-Jan-07 X X
Diode Device 98944798.2 08-Sep-98 EP 1 018 210 B1 20-Dec-06   X
Electrode sandwich separation 10/234,498 03-Sep-02 7,140,102 28-Nov-06 X X
Influence of surface geometry on metal properties 508914 24-Mar-03 7,074,498 11-Jul-06 X X
Method for flat electrodes 639055 11-Aug-03 7,005,381 28-Feb-06 X X
Method for fabrication of separators for electrode pairs in diodes 417494 17-Apr-03 6,971,165 6-Dec-05 X X
Thermotunnel converter with spacers between the electrodes 232436 28-Aug-02 6,876,123 05-Apr-05 X X
Method for making electrode pairs 639908 12-Aug-03 6,869,855 22-Mar-05 X X
Improved Vacuum Diode Heat Pump 97939386.5 22-Aug-97 EP 1 009 958 B1 26-Jan-05   X
Method for making a diode device 192282 9-Jul-02 6,774,003 10-Aug-04 X X
Thermionic vacuum diode device with adjustable electrodes 481803 31-Aug-98 6,720,704 13-Apr-04 X X
Artificial band gap 634615 5-Aug-00 6,680,214 20-Jan-04 X X
Thermionic automobile 828646 5-Apr-01 6,651,760 25-Nov-03 X X
Method for increasing emission through a potential barrier 645985 29-Jun-98 6,531,703 11-Mar-03 X X
Method for increasing emission through a potential barrier 645997 31-Aug-98 6,495,843 17-Dec-02 X X
Method for making a diode device 09/792905 23-Feb-01 6,417,060 09-Jul-02 X X
Method for increasing of tunneling through a potential barrier 09/020,654 09-Feb-98 6,281,514 28-Aug-01 X X
Wafer having smooth surface 09/476,644 31-Dec-99 6,281,139 28-Aug-01 X X
Process for Stampable Photoelectric Generator 09/436,975 09-Nov-99 6,239,356 29-May-01 X X
Thermionic Generator 09/451,509 30-Nov-99 6,229,083 08-May-01 X X
Doped Diamond For Vacuum Diode Heat Pumps and Vacuum Diode Thermionic Generators 09/436,913 09-Nov-99 6,214,651 10-Apr-01 X X
Method for manufacturing low work function surfaces 09/045,299 20-Mar-98 6,117,344 12-Sep-00 X X
Method and apparatus for vacuum diode heat pump 08/498,199 05-Jul-95 6,089,311 18-Jul-00 X X
Method and apparatus for thermionic generator 08/790,753 27-Jan-97 5,994,638 30-Nov-99 X X
Process for stampable photoelectric generator 09/016,089 30-Jan-98 5,981,866 09-Nov-99 X X
Doped diamond for vacuum diode heat pumps and vacuum diode thermionic generators 08/650,623 20-May-96 5,981,071 09-Nov-99 X X
Method for making a low work function electrode 08/744,574 06-Nov-96 5,810,980 22-Sep-98 X X
Method and apparatus for improved vacuum diode heat pump 08/573,074 15-Dec-95 5,722,242 03-Mar-98 X X
Multiple electrostatic gas phase heat pump and method 08/422,076 30-Mar-95 5,699,668 23-Dec-97 X X
Method and apparatus for vacuum diode-based devices with electride-coated electrodes 08/719,792 25-Sep-96 5,675,972 14-Oct-97 X X
NOTE: All patents are under license from Borealis Technical Limited.




Patent 7,893,422
Transistor on the basis of new quantum interference effect
Abstract
A quantum interference transistor comprising a thin metal film having a protrusion and a thin insulating layer between the metal film and protrusion. A potential barrier is formed in the region beneath the protrusion as a result of quantum interference caused by the geometry of the film and protrusion. A voltage applied between the electrically isolated protrusion ("island") and the thin film leads to a change in the electron wave function of the island which in turn leads to a change in the Fermi level of the metal film in the entire region beneath the protrusion. Consequently, a potential barrier may or may not exist depending on the applied voltage, thus providing the present invention with the transistor-like property of switching between open and closed states.

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Patent 7,658,772
Process for making electrode pairs
Abstract
The present invention is a process for making a matching pair of surfaces, which involves creating a network of channels on one surface of two substrate. The substrates are then coated with one or more layers of materials, the coating extending over the regions between the channels and also partially into the channels. The two coated surfaces are then contacted and pressure is applied, which causes the coatings to be pressed into the network of channels, and surface features on one of the layers of material creates matching surface features in the other, and vice versa. It also results in the formation of a composite. In a final step, the composite is separated, forming a matching pair of surfaces.
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Patent 7,642,467
Method for fabrication of separators for electrode pairs in diodes
Abstract
An improved method for manufacturing a matching pair of electrodes comprises the steps of: fabricating a first electrode with a substantially flat surface; depositing islands of an oxidizable material over regions of the surface; depositing a layer of a third material over the surface of the first electrode to form a second electrode; separating the first electrode from the second electrode; oxidizing the islands of oxidizable material, which causes the islands to expand; bringing the upper electrode and the lower electrode into close proximity, whereupon the expanded island of oxidizable material touches the upper surface and creates an insulating gap between the two surfaces, thereby forming a matching pair of electrodes.
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Patent 7,589,348
Thermal tunneling gap diode with integrated spacers and vacuum seal
Abstract
A thermionic or thermotunneling gap diode device consisting of two silicon electrodes maintained at a desired distance from one another by means of spacers. These spacers are formed by oxidizing one electrode, protecting certain oxidized areas and removing the remainder of the oxidized layer. The protected oxidized areas remain as spacers. These spacers have the effect of maintaining the electrodes at a desired distance without the need for active elements, thus greatly reducing costs.
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Patent 7,566,897
Quantum interference device
Abstract
A quantum interference transistor comprising an source region for emitting electron waves into a vacuum, a drain region for collecting the electron waves, a repeating nanostructure in a region between the source and drain regions for introducing a constant phase shift between a plurality of electron waves, and a gate for controlling the phase shift introduced by the nanostructure; wherein the repeating nanostructure is characterized by having sharply defined geometric patterns or indents of a dimension that creates de Broglie wave interference.
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Patent 7,427,786
Diode device utilizing bellows
Abstract
A diode device is disclosed, comprising a pair of electrodes separated by bellows. The corrugated walls of the bellows create a tortuous thermal pathway thereby reducing parasitic heat losses and increasing the device's efficiency. The bellows' also allow for a controlled environment to be sustained within the device. In a preferred embodiment the controlled environment is a vacuum. In one embodiment, a modified electrode for use in a diode device of the present invention is disclosed, in which indents are made on the surface of the electrode. In a further embodiment the bellows comprise shape memory alloys: previously deformed bellows are attached to the diode device and then grown to set the gap between the electrodes. In further embodiments the use of corrugation is applied to other parts of the diode device to elongate its thermal pathway and thereby increase its efficiency. For example, in one embodiment the outer rims of electrodes in a diode device are corrugated to increase the device's thermal pathway.
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Patent 7,351,996
Method for increasing efficiency of thermotunnel devices
Abstract
The present invention comprises a tunneling device in which the collector electrode is modified so that tunneling of higher energy electrons from the emitter electrode to the collector electrode is enhanced. In one embodiment, the collector electrode is contacted with an insulator layer, preferably aluminum or silicon nitride, disposed between the collector and emitter electrodes. The present invention additionally comprises a method for enhancing tunneling of higher energy electrons from an emitter electrode to a collector electrode, the method comprising the step of contacting the collector electrode with an insulator, preferably aluminum or silicon nitride, and placing the insulator between the collector electrode and the emitter electrode.
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Patent 7,323,7099
Method for increasing efficiency of thermotunnel devices
Abstract
The present invention comprises a tunneling device in which the collector electrode is modified so that tunneling of higher energy electrons from the emitter electrode to the collector electrode is enhanced. In one embodiment, the collector electrode is contacted with an insulator layer, preferably aluminum oxide, disposed between the collector and emitter electrodes. The present invention additionally comprises a method for enhancing tunneling of higher energy electrons from an emitter electrode to a collector electrode, the method comprising the step of contacting the collector electrode with an insulator, preferably aluminum oxide, and placing the insulator between the collector electrode and the emitter electrode.
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Patent 7,253,549
Thermionic vacuum diode device with adjustable electrodes
Abstract
MIn accordance with one embodiment of the present invention, a Gap Diode is disclosed in which a tubular actuating element serves as both a housing for a pair of electrodes (92) and as a means for controlling the separation between the electrode pair. In a preferred embodiment, the tubular actuating element (90) is a quartz piezo-electric tube. In accordance with another embodiment of the present invention, a Gap Diode is disclosed which is fabricated by micromachining techniques in which the separation of the electrodes (202, 206) is controlled by piezo-electric, electrostrictive or magnetostrictive actuators. Preferred embodiments of Gap Diodes include Cool Chips, Power Chips, and photoelectric converters.
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Patent 7,220,984
Influence of surface geometry on metal properties
Abstract
The influence of surface geometry on metal properties is studied within the limit of the quantum theory of free electrons. It is shown that a metal surface can be modified with patterned indents to increase the Fermi energy level inside the metal, leading to decrease in electron work function. This effect would exist in any quantum system comprising fermions inside a potential energy box. Also disclosed is a method for making nanostructured surfaces having perpendicular features with sharp edges.
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Patent 7,208,021
Fabrication of close-spaced MEMS devices by method of precise adhesion regulation
Abstract
In one aspect, the present invention provides a method for fabricating two layers separated by a gap comprising the steps of: (a) providing a first material; (b) treating the first material to reduce the number of available bonding centers; (c) placing a second material over the first material and allowing bonds to form between the two materials to form a composite; and (d) separating the composite so formed along the boundary of the two materials. In a further aspect, subsequent layers of material may be introduced to the composite by repeating steps (b) and (c) under conditions where adhesion between the subsequent layers is greater, smaller or substantially the same as the adhesion between the first and second material.
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Patent 7,169,006
Thermionic vacuum diode device with adjustable electrodes
Abstract
MIn accordance with one embodiment of the present invention, a Gap Diode is disclosed in which a tubular actuating element serves as both a housing for a pair of electrodes (92) and as a means for controlling the separation between the electrode pair. In a preferred embodiment, the tubular actuating element (90) is a quartz piezo-electric tube. In accordance with another embodiment of the present invention, a Gap Diode is disclosed which is fabricated by micromachining techniques in which the separation of the electrodes (202, 206) is controlled by piezo-electric, electrostrictive or magnetostrictive actuators. Preferred embodiments of Gap Diodes include Cool Chips, Power Chips, and photoelectric converters.
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Patent 7,166,786
Artificial band gap
Abstract
A method is disclosed for the induction of a suitable band gap and electron emissive properties into a substance, in which the substrate is provided with a surface structure corresponding to the interference of electron waves. Lithographic or similar techniques are used, either directly onto a metal mounted on the substrate, or onto a mold which then is used to impress the metal. In a preferred embodiment, a trench or series of nano-sized trenches are formed in the metal.
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Patent 7,140,102
Electrode sandwich separation
Abstract
Materials bonded together are separated using electrical current, thermal stresses, mechanical force, any combination of the above methods, or any other application or removal of energy until the bonds disappear and the materials are separated. In one embodiment the original bonding was composed of two layers of material. In another embodiment, the sandwich was composed of three layers. In a further embodiment, the parts of the sandwich are firmly maintained in their respective positions during the application of current so as to be able to subsequently align the materials relative to one another.
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Patent 7,074,498
Influence of surface geometry on metal properties
Abstract
The influence of surface geometry on metal properties is studied within the limit of the quantum theory of free electrons. It is shown that a metal surface can be modified with patterned indents to increase the Fermi energy level inside the metal, leading to decrease in electron work function. This effect would exist in any quantum system comprising fermions inside a potential energy box. Also disclosed is a method for making nanostructured surfaces having perpendicular features with sharp edges.
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Patent 7,005,381 - Method for flat electrodes


Abstract
The present invention is a method for reducing nanoscale surface roughness. The method involves exposing the surface to an environment that preferentially promotes evaporation of material from the region of nanoscale roughness. The methods involve either heating the surface, or flushing an inert gas across the surface, or a combination of both.
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Patent 6,971,165 - Method for fabrication of separators for electrode pairs in diodes


Abstract
An improved method for manufacturing a matching pair of electrodes comprises the steps of: fabricating a first electrode with a substantially flat surface; depositing islands of an oxidizable material over regions of the surface; depositing a layer of a third material over the surface of the first electrode to form a second electrode; separating the first electrode from the second electrode; oxidizing the islands of oxidizable material, which causes the islands to expand; bringing the upper electrode and the lower electrode into close proximity, whereupon the expanded island of oxidizable material touches the upper surface and creates an insulating gap between the two surfaces, thereby forming a matching pairs of electrodes.
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Patent 6,876,123
Thermotunnel converter with spacers between the electrodes
Abstract
A thermotunneling converter is disclosed comprising a pair of electrodes having inner surfaces substantially facing one another, and a spacer or plurality of spacers positioned between the two electrodes, having a height substantially equal to the distance between the electrodes, and having a total cross-sectional area that is less than the cross-sectional area of either of the electrodes. In a preferred embodiment, a vacuum is introduced, and in a particularly preferred embodiment, gold that has been exposed to cesium vapor is used as one or both of the electrodes. In a further embodiment, the spacer is made of small particles disposed between the electrodes. In a yet further embodiment, a sandwich is made containing the electrodes with an unoxidized spacer. The sandwich is separated and the spacer is oxidized, which makes it grow to a required height whilst giving it insulatory properties, to allow for tunneling between the electrodes.
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Patent 6,869,855
Method for making electrode pairs
Abstract
The present invention is a method for introducing a low work function material into a pair of matched electrodes. The method involves fabricating a composite of two electrodes and a low work function material, and treating the composite so that it splits to give a pair of matched electrodes.
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Patent 6,774,003
Method for making a diode device
Abstract
A method for manufacturing a pair of electrodes comprises fabricating a first electrode with a substantially flat surface and placing a sacrificial layer over a surface of the first electrode, wherein the sacrificial layer comprises a first material. A second material is placed over the sacrificial layer, wherein the second material comprises a material that is suitable for use as a second electrode. The sacrificial layer is removed with an etchant, wherein the etchant chemically reacts with the first material, and further wherein a region between the first electrode and the second electrode comprises a gap that is a distance of 50 nanometers or less, preferably 5 nanometers or less. Alternatively, the sacrificial layer is removed by cooling the sandwich with liquid nitrogen, or alternatively still, the sacrificial layer is removed by heating the sacrificial layer, thereby evaporating the sacrificial layer.
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Patent 6,720,704
Thermionic vacuum diode device with adjustable electrodes
Abstract
Diode devices are disclosed in which the separation of the electrodes is set and controlled using piezo-electric, electrostrictive or magnetostrictive actuators. This avoids problems associated with electrode spacing changing or distorting as a result of heat stress. In addition it allows the operation of these devices at electrode separations which permit quantum electron tunneling between them. Pairs of electrodes whose surfaces replicate each other are also disclosed. These may be used in constructing devices with very close electrode spacings.
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Patent 6680214
Artificial band gap
Abstract
A method is disclosed for the induction of a suitable band gap and electron emissive properties into a substance, in which the substrate is provided with a surface structure corresponding to the interference of electron waves.   Lithographic or similar techniques are used, either directly onto a metal mounted on the substrate, or onto a mold which then is used to impress the metal.   In a preferred embodiment, a trench or series of nano-sized trenches are formed in the metal.
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Patent 6651760
Thermionic automobile
Abstract
A combustion chamber-thermionic device-electric motor is provided in an automobile.   The combustion chamber of the present invention provides a heat output which is transformed to electricity by the thermionic device and a motor converts the electrical energy to motive power for the wheels.
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Patent 6531703
Method for increasing emission through a potential barrier
Abstract
A method for promoting the passage of elementary particles at or through a potential barrier comprising providing a potential barrier having a geometrical shape for causing de Broglie interference between said elementary particles is disclosed.   In another embodiment, the invention provides an elementary particle-emitting surface having a series of indents.   The depth of the indents is chosen so that the probability wave of the elementary particle reflected from the bottom of the indent interferes destructively with the probability wave of the elementary particle reflected from the surface.   This results in the increase of tunneling through the potential barrier.   When the elementary particle is an electron, then electrons tunnel through the potential barrier, thereby leading to a reduction in the effective work function of the surface.   In further embodiments the invention provides vacuum diode devices, including a vacuum diode heat pump, a thermionic converter and a photoelectric converter, in which either or both of the electrodes in these devices utilize said elementary particle-emitting surface.   In yet further embodiments, the invention provides devices in which the separation of the surfaces in such devices is controlled by piezo-electric positioning elements.   A further embodiment provides a method for making an elementary particle-emitting surface having a series of indents.
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Patent 6495843
Method for increasing emission through a potential barrier
Abstract
A method for promoting the passage of elementary particles at or through a potential barrier comprising providing a potential barrier having a geometrical shape for causing de Broglie interference between said elementary particles is disclosed.   In another embodiment, the invention provides an elementary particle-emitting surface having a series of indents.   The depth of the indents is chosen so that the probability wave of the elementary particle reflected from the bottom of the indent interferes destructively with the probability wave of the elementary particle reflected from the surface.   This results in the increase of tunneling through the potential barrier.   When the elementary particle is an electron, then electrons tunnel through the potential barrier, thereby leading to a reduction in the effective work function of the surface.   In further embodiments, the invention provides vacuum diode devices, including a vacuum diode heat pump, a thermionic converter and a photoelectric converter, in which either or both of the electrodes in these devices utilize said elementary particle-emitting surface.   In yet further embodiments, the invention provides devices in which the separation of the surfaces in such devices is controlled by piezo-electric positioning elements.   A further embodiment provides a method for making an elementary particle-emitting surface having a series of indents.
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Patent 6417060
Method for making a diode device
Abstract
A method for manufacturing a pair of electrodes comprises fabricating a first electrode with a substantially flat surface and placing a sacrificial layer over a surface of the first electrode, wherein the sacrificial layer comprises a first material.   A second material is placed over the sacrificial layer, wherein the second material comprises a material that is suitable for use as a second electrode.   The sacrificial layer is removed with an etchant, wherein the etchant chemically reacts with the first material, and further wherein a region between the first electrode and the second electrode comprises a gap that is a distance of 50 nanometers or less, preferably 5 nanometers or less.   Alternatively, the sacrificial layer is removed by cooling the sandwich with liquid nitrogen, or alternatively still, the sacrificial layer is removed by heating the sacrificial layer, thereby evaporating the sacrificial layer.
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Patent 6281514
Method for increasing of tunneling through a potential barrier
Abstract
A method for promoting the passage of elementary particles at or through a potential barrier comprising providing a potential barrier having a geometrical shape for causing de Broglie interference between said elementary particles is disclosed.  In another embodiment, the invention provides an elementary particle-emitting surface having a series of indents.  The depth of the indents is chosen so that the probability wave of the elementary particle reflected from the bottom of the indent interferes destructively with the probability wave of the elementary particle reflected from the surface.  This results in the increase of tunneling through the potential barrier.  When the elementary particle is an electron, then electrons tunnel through the potential barrier, thereby leading to a reduction in the effective work function of the surface.  In further embodiments, the invention provides vacuum diode devices, including a vacuum diode heat pump, a thermionic converter and a photoelectric converter, in which either or both of the electrodes in these devices utilize said elementary particle-emitting surface.  In yet further embodiments, the invention provides devices in which the separation of the surfaces in such devices is controlled by piezo-electric positioning elements.  A further embodiment provides a method for making an elementary particle-emitting surface having a series of indents.  
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Patent 6281139
Wafer having smooth surface
Abstract
A method for preparing a wafer having a smooth surface is disclosed.  The present invention includes the step of preparing a wafer base and a first material on the wafer base.  The wafer base and first material have a surface and a plurality of holes.  The present invention includes the step of depositing a second material at an angle on the first material such that the second material is substantially on the surface.  The present invention includes the step of exposing the first material and the second material to an oxidizing agent.  The present includes the step of reacting a third material on the second surface to close the holes.  
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Patent 6,239,356 B1
Process for Stampable Photoelectric Generator
Abstract
Manufacture of a photoelectric converter by a photolithographic or stamping process prior to coating with a photoelectically emissive material is described.  This gives an economic and simple means of mass-producing photoelectric converter cells, and in one aspect is analogous to that used for pressing optical discs.  
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Patent 6,229,083 B1
Thermionic Generator
Abstract
A method for building a thermionic converter comprises providing an electrode and creating a central depression of substantially uniform depth on a face of the electrode.  A surface of the central depression is coated with a layer comprising a thermionic material.   A second electrode comprising a face is also provided, wherein the face of the second electrode comprises a central depression of substanially uniform depth, wherein the central depression is coated with a layer comprising a thermionic material.  
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Patent 6214651B1
Doped Diamond for Vacuum Diode Heat Pumps and Vacuum Diode Thermionic Generators
Abstract
A novel use of doped carbonaceous material is disclosed, integral to the operation of Vacuum Diode Heat Pumps and Vacuum Diode Thermionic Generators.  In the preferred embodiment, the use of nitrogen-doped diamond enhances the operation of Vacuum Diode Heat Pumps and Vacuum Diode Thermionic Generators.  
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Patent 6117344
METHOD FOR MANUFACTURING LOW WORK FUNCTION SURFACES
Abstract
Methods for fabricating nano-structured surfaces having geometries in which the passage of elementary particles through a potential barrier is enhanced are described.   The methods use combinations of electron beam lithography, lift-off, and rolling, imprinting or stamping processes.  
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Patent 6089311
METHOD AND APPARATUS FOR VACUUM DIODE HEAT PUMP
Abstract
A new use for thermionic vacuum diode technology is disclosed wherein a vacuum diode is constructed using very low work function electrodes. A negative potential bias is applied to the cathode relative to the anode, and electrons are emitted. In the process of emission the electrons carry off kinetic energy, carrying heat away from the cathode and dissipating it at an opposing anode.  The resulting heat pump is more efficient than conventional cooling methods, as well as being substantially scalable over a wide range of applications. Fabrication using conventional microelectronic fabrication techniques is possible.  
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Patent 5699668
MULTIPLE ELECTROSTATIC GAS PHASE HEAT PUMP AND METHOD
Abstract
In the method of the present invention, electrostatic fields are used to induce heat pumping action of a working fluid.  A plurality of heat pumps with no moving parts are used.  The operation of the one pump enhances the operation of the next.  The method of the present invention is conducive to devices of a wide range of scales.  Furthermore, operation at partial power levels is practicable and precise control of temperature possible.  Control is further enhanced by the addition or removal of further units to the system.  Reliability should be enhanced, and peak power demands reduced.  Wide selection of possible working fluids allows for the elimination of environmentally harmful halocarbons. In one embodiment of the present invention, chemical working fluids are eliminated entirely.  In another embodiment, supercooled fluids such as liquid helium may be used while eliminating the wastage commonly encountered using such fluids
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Patent 5722242
METHOD AND APPARATUS FOR IMPROVED VACUUM DIODE HEAT PUMP
Abstract
A Vacuum Diode Heat Pump is optimized for the most efficient pumping of heat by utilizing a cathode and anode of very low work function.  The relationship of the work functions of the cathode and anode are shown to be optimized when the cathode work function is the minimum value required to maintain current density saturation at the desired temperature, while the anode's work function is as low as possible, and in any case lower than the cathode's work function.  When this relationship is obtained, the efficiency of the original device is improved.  It is further shown that contact potential difference between cathode and anode may be set against the effects of space charge, resulting in an improved device whereby anode and cathode may be set at a greater distance form each other than has been previously envisaged.
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Patent 5981071
DOPED DIAMOND FOR VACUUM DIODE HEAT PUMPS AND VACUUM DIODE THERMIONIC GENERATORS
Abstract
A novel use of doped carbonaceous material is disclosed, integral to the operation of Vacuum Diode Heat Pumps and Vacuum Diode Thermionic Generators.  In the preferred embodiment, the use of nitrogen-doped diamond enhances the operation of Vacuum Diode Heat Pumps and Vacuum Diode Thermionic Generators.
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Patent 5675972
METHOD AND APPARATUS FOR VACUUM DIODE-BASED DEVICES WITH ELECTRIDE-COATED ELECTRODES
Abstract
Vacuum diode-based devices, including Vacuum Diode Heat Pumps and Vacuum Thermionic Generators, are described in which the electrodes are coated with an electride.  These materials have low work functions, which means that contact potential difference between cathode and anode may be set against the effects of space charge, resulting in an improved device whereby anode and cathode may be set at a greater distance from each other than has been previously envisaged.
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Patent 5810980
LOW WORK-FUNCTION ELECTRODE
Abstract
A metal surface is coated with a heterocyclic multidentate ligand compound, reducing work function and facilitating the emission of electrons.
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Patent 5874039
LOW WORK FUNCTION ELECTRODE
Abstract
A substrate is coated with a compound comprised of a cation completed by a heterocyclic multidentate ligand, which provides a surface having a low work-function and facilitates the emission of electrons.
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Patent 5994638

METHOD AND APPARATUS FOR THERMIONIC GENERATOR
Abstract
An improved thermionic generator constructed using a microengineering techniques is described.  This device is easy to construct in large numbers, efficient, and inexpensive.  a preferred embodiment uses micromachined silicon to produce a thermionic converter cell.  These may be joined together in large arrays to form a thermionic generator.
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Patent 5,981,866
PROCESS FOR STAMPABLE PHOTOELECTRIC GENERATOR
Abstract
Manufacture of a photoelectric converter by a photolithographic or stamping process prior to coating with a photoelectrically emissive material is described.   This gives an economic and simple means of mass-producing photoelectric converter cells, and in one aspect is analogous to that used for pressing optical discs.

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Patent 5,981,071 (DopeDiamon)
DOPED DIAMOND FOR VACUUM DIODE HEAT PUMPS AND VACUUM DIODE THERMIONIC GENERATORS
Abstract
A novel use of doped carbonaceous material is disclosed, integral to the operation of Vacuum Diode Heat Pumps and Vacuum Diode Thermionic Generators.  In the preferred embodiment, the use of nitrogen-doped diamond enhances the operation of Vacuum Diode Heat Pumps and Vacuum Diode Thermionic Generators.

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